Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga2O3 Schottky diode

被引：0

作者：

Paul, Sanjoy ^{[1
,2
]}

Lopez, Roberto ^{[1
]}

Neal, Adam T. ^{[3
]}

Mou, Shin ^{[3
]}

Li, Jian V. ^{[3
,4
]}

机构：

[1] Department of Physics, Texas State University, San Marcos,TX,78666, United States

[2] Materials Science, Engineering, and Commercialization Program, Texas State University, San Marcos,TX,78666, United States

[3] Materials and Manufacturing, Air Force Research Laboratory, Wright Patterson AFB,OH,45433, United States

[4] Azimuth Corporation, Fairborn,OH,45324, United States

来源：

Journal of Vacuum Science and Technology B | 2024年 / 42卷 / 02期

关键词：

Capacitance - Diodes - Electronic properties - Gallium compounds - Indium compounds - Schottky barrier diodes - Spectroscopic analysis - Temperature;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This study reports the electronic properties of the indium tin oxide (ITO)/β-Ga2O3 Schottky diode through the temperature (50-320 K)-dependent current density-voltage, capacitance-voltage, and admittance spectroscopy experiments. The room-temperature turn-on voltage of the ITO/β-Ga2O3 diode was observed to be 0.83 V, and it exhibited a slow increase with decreasing temperature. The ITO/β-Ga2O3 diode's ideality factor (n) varied from 3.92 to 1.05, and the zero-bias Schottky barrier height ( φ b o ) varied from 0.31 to 1.28 eV. The temperature-dependent n and φ b o indicate the spatial inhomogeneities of the potential barrier at the Ga2O3-ITO interface. We exploit the Gaussian distribution model to explain the Schottky barrier inhomogeneities, which could be associated with the defects observed by the admittance spectroscopy method. © 2024 Author(s).

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