Shape Modification of Vertical Nanowires under Annealing

被引：0
作者：
Nastovjak, A. G. [1 ,2 ]
Shwartz, N. L. [1 ,2 ]
机构：
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] Novosibirsk State Tech Univ, Novosibirsk 630073, Russia
来源：
OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2024年 / 60卷 / 02期
关键词：
nanowires; annealing; readsorption;
D O I：
10.3103/S8756699024700262
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The numerical calculation of the shape modification of vertical nanowires under annealing due to the readsorption of the substance evaporated from the neighboring nanowires and substrate was carried out. The calculation was performed by the model of evaporation from a set of spherically symmetric sources and by the Knudsen-Lambert model. The effect produced on the shape of nanowires by the aspect ratio of the nanowire length to the distance between them and the rate of material evaporation from the nanowire side wall and substrate was analyzed.
引用
收藏
页码：220 / 228
页数：9
相关论文
共 11 条
  • [1] Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
    Balagula, Roman M.
    Jansson, Mattias
    Yukimune, Mitsuki
    Stehr, Jan E.
    Ishikawa, Fumitaro
    Chen, Weimin M.
    Buyanova, Irina A.
    [J]. SCIENTIFIC REPORTS, 2020, 10 (01)
  • [2] Influence of substrate temperature on the shape of GaAs nanowires grown by Au-assisted MOVPE
    Bouravleuv, A. D.
    Sibirev, N. V.
    Statkute, G.
    Cirlin, G. E.
    Lipsanen, H.
    Dubrovskii, V. G.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2010, 312 (10) : 1676 - 1682
  • [3] A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy
    Devkota, Shisir
    Parakh, Mehul
    Ramaswamy, Priyanka
    Kuchoor, Hirandeep
    Penn, Aubrey
    Reynolds, Lewis
    Iyer, Shanthi
    [J]. CATALYSTS, 2022, 12 (05)
  • [4] Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
    Fontcuberta i Morral, A.
    Colombo, C.
    Abstreiter, G.
    Arbiol, J.
    Morante, J. R.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (06)
  • [5] Model of patterned self-assisted nanowire growth
    Gibson, Sandra J.
    LaPierre, Ray R.
    [J]. NANOTECHNOLOGY, 2014, 25 (41)
  • [6] Thermal decomposition of GaAs nanowires
    Ilkiv, Igor
    Kirilenko, Demid
    Kotlyar, Konstantin
    Bouravleuv, Alexey
    [J]. NANOTECHNOLOGY, 2020, 31 (05)
  • [7] Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse-Reaction Growth
    Loitsch, Bernhard
    Rudolph, Daniel
    Morkoetter, Stefanie
    Doeblinger, Markus
    Grimaldi, Gianluca
    Hanschke, Lukas
    Matich, Sonja
    Parzinger, Eric
    Wurstbauer, Ursula
    Abstreiter, Gerhard
    Finley, Jonathan J.
    Koblmueller, Gregor
    [J]. ADVANCED MATERIALS, 2015, 27 (13) : 2195 - +
  • [8] Simulation of GaAs nanowire annealing
    Nastovjak, A. G.
    Shterental, D. V.
    Shwartz, N. L.
    [J]. COMPUTATIONAL MATERIALS SCIENCE, 2023, 228
  • [9] Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range
    Stehr, J. E.
    Balagula, R. M.
    Jansson, M.
    Yukimune, M.
    Fujiwara, R.
    Ishikawa, F.
    Chen, W. M.
    Buyanova, I. A.
    [J]. NANOTECHNOLOGY, 2020, 31 (06)
  • [10] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E )
    WAGNER, RS
    ELLIS, WC
    [J]. APPLIED PHYSICS LETTERS, 1964, 4 (05) : 89 - &
12