Improving the Properties of Ni0.4Cu0.4Cd0.2Fe2O4 Spinel Ferrites via Heat Treatment for Electrical and Optoelectronic Applications

被引:3
作者
Hcini, Dhouha [1 ,2 ]
Hcini, Sobhi [2 ]
Hcini, Fakher [3 ]
Dhaou, Mohamed Houcine [4 ]
Mallah, Abdulrahman [5 ]
Charguia, Raihane [4 ]
Jabli, Fikria [4 ]
Dhahri, Abdessalem [1 ]
Khirouni, Kamel [6 ]
机构
[1] Univ Monastir, Phys Dept, Fac Sci Monastir, Lab Phys Chem Mat, Monastir 5019, Tunisia
[2] Univ Kairouan, Fac Sci & Technol Sidi Bouzid, Lab Adv Multifunct Mat & Technol Applicat, Univ Campus Agr City, Sidi Bouzid 9100, Tunisia
[3] Univ Gabes, Higher Inst Appl Sci & Technol Gabes ISSATG, Adv Mat Appl Mech Innovat Proc & Environm Res Unit, Gabes 6072, Tunisia
[4] Qassim Univ, Coll Sci, Dept Phys, Buraydah 51452, Saudi Arabia
[5] Qassim Univ, Coll Sci, Dept Chem, Buraydah 51452, Saudi Arabia
[6] Univ Gabes, Fac Sci Gabes Cited Erriadh, Lab Phys Mat & Nanomat Appl Environm LaPhyMNE, Gabes 6079, Tunisia
关键词
Sol-gel method; spinel ferrites; x-ray diffraction; calcination temperature; microwave absorption devices; optoelectronic applications; MAGNETIC-PROPERTIES; OPTICAL-PROPERTIES; SINTERING TEMPERATURE; THIN-FILM; ELECTROMAGNETIC PROPERTIES; DIELECTRIC-PROPERTIES; TRANSPORT-PROPERTIES; CATION DISTRIBUTION; BAND-GAP; BEHAVIOR;
D O I
10.1007/s11664-024-11239-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study examines the effects of varying calcination temperatures on the properties of Ni0.4Cu0.4Cd0.2Fe2O4 spinel ferrites. As confirmed by X-ray diffraction measurements, the compound calcined at 950 degrees C exhibits a larger average crystallite size and lattice constant than the sample calcined at 850 degrees C. The electrical conductivity study demonstrated semiconductor behavior for both samples, following the non-overlapping small polaron tunneling (NSPT) model for conduction. The samples showed high electrical resistivity and decreased activation energy (E-a) from 0.33 eV (at 850 degrees C) to 0.31 eV (at 950 degrees C), suggesting that they could be used in microwave absorption devices. The optical measurements reveal that the samples present direct optical transitions with an estimated optical bandgap energy (E-g) of 2.61 eV at 850 degrees C and 2.39 eV at 950 degrees C. Analyzing the refractive index change provided the Cauchy parameters, while the Wemple-DiDomenico relationship provided the dispersion energy parameters. Other optical characteristics, like the extinction coefficient, penetration depth, dielectric constants, and optical conductivity, were also thoroughly examined. These optical characteristics offered insightful information about the synthesized samples' possible optoelectronic uses.
引用
收藏
页码:5706 / 5727
页数:22
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