Enhancing the photovoltaic responses of MAPbI3 poly-crystalline perovskite films via adjusting the properties of PEDOT:PSS hole transport material with a low-polarity solvent treatment process

被引:4
作者
Tsai, Chia-Lung [1 ,2 ,3 ,4 ]
Manjunatha, S. N. [1 ,2 ]
Sharma, Mukta [1 ,2 ]
Chang, Sheng Hsiung [5 ,6 ]
Hsieh, Yu-Li [7 ]
Chang, Liann-Be [1 ,2 ]
Chang, Chun-Huan [1 ,2 ]
机构
[1] Chang Gung Univ, Dept Elect Engn, Taoyuan 33323, Taiwan
[2] Chang Gung Univ, Green Technol Res Ctr, Taoyuan 33323, Taiwan
[3] Chang Gung Mem Hosp, Dept Otolaryngol Head & Neck Surg, Taoyuan 33323, Taiwan
[4] Ming Chi Univ Technol, Dept Elect Engn, New Taipei 23652, Taiwan
[5] Chung Yuan Christian Univ, Dept Phys, Taoyuan 320314, Taiwan
[6] Chung Yuan Christian Univ, Res Ctr Semicond Mat & Adv Opt, Taoyuan 320314, Taiwan
[7] Natl Def Univ, Chung Cheng Inst Technol, Dept Elect & Elect Engn, Taoyuan 335, Taiwan
关键词
Formation of photo-activeMAPbI3; Excitonic properties; Current hysteresis reduction; ABSORBER BASED PHOTOVOLTAICS; CH3NH3PBI3; THIN-FILMS; HIGH-PERFORMANCE; SOLAR-CELLS; EFFICIENCY; HYSTERESIS; THICKNESS; LAYER;
D O I
10.1016/j.mssp.2024.108355
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The surface and electrical characteristics of the poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) materials are manipulated using a low -polarity solvent treatment process, which influences the formation and nucleation/crystal growth process of the CH3NH3PbI3 (MAPbI3) perovskite films and thereby determining the crystal orientation and grain size. The hydrophilicity of the PEDOT:PSS composite material fabricated on the ITO/glass sample is reduced with the xylenes solvent treatment or a hexamethyldisilazane: xylenes solvent mixture treatment, which can be used to form the photo -active perovskite crystals and thereby reducing the photocurrent hysteresis of the fabricated perovskite based photovoltaic devices. It is worthwhile to mention that the non -perfectness of closed -loop in the photocurrent density -voltage curves under the forward and backward scans can be used as an indicator to assess the properties of the MAPbI3 films. Our findings can facilitate the development of perovskite based optoelectronic devices.
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页数:8
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