Roles of chalcogen sublayers of 1H transition metal dichalcogenides in metal-semiconductor van der Waals heterostructures

被引:1
|
作者
Habe, Tetsuro [1 ]
机构
[1] Kyoto Univ Adv Sci, Nagamori Inst Actuators, Kyoto 6158577, Japan
关键词
All Open Access; Hybrid Gold;
D O I
10.1103/PhysRevB.109.075308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, the crystal and electronic structures are investigated using first-principles theory for metalMoS2, MoSe2, WS2, and WSe2). The theoretical investigations reveal that chalcogen sublayers play crucial roles in the crystal and electronic structures though these sublayers are minor parts in the pristine crystals. Actually, selenide sublayers energetically stabilize the commensurate heterobilayers, whereas moire structure gives a much lower electronic energy with sulfide sublayers. Moreover, the chalcogen sublayers dominate the charge distribution via the difference of work functions in the component layers, i.e., the charge transfer between the metallic and semiconducting layers in the heterobilayers. The theoretical results suggest that the chalcogen sublayers can be the key to control the crystal and electronic structures in the metal-semiconductor vdW heterostructure of TMDC monolayers.
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页数:9
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