Numerical Study and Optimization of a Perovskite Solar Cell Based on Methylammonium Lead Iodide

被引:0
|
作者
Kerara, M. [1 ]
Naas, A. [1 ]
Gueddim, A. [1 ]
Meglali, O. [1 ,2 ]
机构
[1] Univ Djelfa, Fac Sci, Mat Sci & Informat Lab, Djelfa 17000, Algeria
[2] Univ Msila, Fac Sci, Msila 28000, Algeria
关键词
Perovskite; CH3NH3PbI3; Electron transport layer; Thickness; AMPS-1D; VALENCE-BAND OFFSETS; SIMULATION; PERFORMANCE; DEPOSITION; CONDUCTION; INTERFACE; NIO;
D O I
10.1007/s42341-024-00549-w
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Provskite solar cells are new devices belonging to the third generation of photovoltaic solar cells. These solar cells are attracting much interest because of their high performance witnessing continuous improvement. In this work, numerical simulations of FTO/NiO/CH3NH3PbI3/(ZnO or TiO2)/Mn perovskite solar cells are performed using AMPS-1D simulator. Two electron transport layers (ETLs) are considered: zinc oxide and titanium oxide. Our perovskite solar cells have brought a wave of innovation to the field of photovoltaics due to their interesting efficiency rivaling established technologies like silicon cells, their simple and low-cost production since that CH3NH3PbI3 can be formed using a spin-coating method, making the fabrication process significantly easier and cheaper compared to traditional techniques. Their excellent light absorption, along with their tunable bandgap are also advantageous parameters. This flexibility allows for tailoring the cell to absorb specific parts of the solar spectrum. The influence of the thickness and the doping concentration in the absorber layer and electron transport layer on the photovoltaic parameters (the short circuit current density J(sc,) the open circuit voltage V-oc,V- the fill factor FF and the power conversion efficiency (PCE)) is investigated. The best efficiency performance of 28.2% has been obtained for 300 nm thickness of the absorber layer and 260 nm thickness of TiO2 as electron transport layer and a doping concentration of 10(16) cm(- 3). The corresponding short-circuit current density is recorded to be 28.81 mA/cm2 whereas the open-circuit voltage is found to be 1.44 V.
引用
收藏
页码:665 / 673
页数:9
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