Fabrication of C12H28ClN-assisted perovskites thin films with micrometer-sized grains via low-temperature hot-casting in ambient air for resistive memory device application

被引:0
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作者
Ali, Nasir [1 ,2 ]
Attique, Sanam [3 ]
Rauf, Sajid [4 ]
Ali, Shahid [5 ]
Khesro, Amir [6 ]
Akram, Fazli [7 ]
Wu, Huizhen [1 ]
机构
[1] Zhejiang Province Key Laboratory of Quantum Technology and Devices and Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou,310027, China
[2] Department of Physics, Government Degree College, KP, Thana, Malakand,23000, Pakistan
[3] Institute for Composites Science and Innovation (InCSI), School of Material Science and Engineering, Zhejiang University, Hangzhou,310027, China
[4] College of Electronic and Information Engineering, Shenzhen University, Guangdong Province,518000, China
[5] Materials Research Laboratory, Department of Physics, University of Peshawar, Peshawar,25120, Pakistan
[6] Department of Physics Abdul, Wali Khan University, Mardan,23200, Pakistan
[7] Department of Mathematics and Physics / CREST Center, North Carolina Central University, Durham,NC,27707, United States
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Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I
115904
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摘要
Atmospheric temperature - Carrier lifetime - Chlorine compounds - Fabrication - Grain boundaries - Optoelectronic devices - Perovskite solar cells - Thin films - Virtual storage
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