Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET

被引：4

作者：

Kuk, Song-Hyeon ^{[1
]}

Choi, Seongjun ^{[1
]}

Kim, Hyeong Yun ^{[2
]}

Ko, Kyul ^{[3
]}

Jeong, Jaeyong ^{[1
]}

Geum, Dae-Myeong ^{[4
]}

Han, Jae-Hoon ^{[3
]}

Park, Ji-Hyeon ^{[2
]}

Jeon, Dae-Woo ^{[2
]}

Kim, Sang-Hyeon ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea

[2] Korea Inst Ceram Engn & Technol, Jinju 52851, South Korea

[3] Korea Inst Sci & Technol KIST, Seoul 02792, South Korea

[4] Chungbuk Natl Univ, Sch Semicond Engn, Cheongju 28644, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Scattering; MOSFET; Logic gates; Voltage measurement; Magnetic field measurement; Temperature measurement; Doping; Channel mobility; hall measurement; power metal-oxide-semiconductor field-effect-transistors (MOSFET); specific ON-resistance; ELECTRON-SCATTERING MECHANISMS; INVERSION LAYER MOBILITY; SI MOSFETS; UNIVERSALITY;

D O I：

10.1109/TED.2024.3381916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High critical field (Ec) and low specific ON-resistance (RON) beta-Ga(2)O(3 )devices such as accumulationchannel metal-oxide-semiconductor field-effect-transistors(MOSFET) have been reported for high-power and extremeenvironment applications. Channel carrier mobility is acritical factor to reduceRON, but a lack of studies on channel mobility in beta-Ga2O3 MOSFETs hinders understandingthe electrical characteristics. We study carrier mobility inthe channels with various doping concentrations using MOS-gated Hall measurements. Our MOSFET achieves arecord-high peak channel mobility (mu peak) of 143 cm2/V<middle dot>s,to the best of our knowledge. Moreover, we suggest that further improvements can be made by enhancing Coulombscattering-limited mobility (mu C)

引用

页码：3429 / 3432

页数：4

共 18 条

[1] β-Gallium oxide power electronics
Green, Andrew J.
Speck, James
Xing, Grace
Moens, Peter
Allerstam, Fredrik
Gumaelius, Krister
Neyer, Thomas
Arias-Purdue, Andrea
Mehrotra, Vivek
Kuramata, Akito
Sasaki, Kohei
Watanabe, Shinya
Koshi, Kimiyoshi
Blevins, John
Bierwagen, Oliver
Krishnamoorthy, Sriram
Leedy, Kevin
Arehart, Aaron R.
Neal, Adam T.
Mou, Shin
Ringel, Steven A.
Kumar, Avinash
Sharma, Ankit
Ghosh, Krishnendu
Singisetti, Uttam
Li, Wenshen
Chabak, Kelson
Liddy, Kyle
Islam, Ahmad
Rajan, Siddharth
Graham, Samuel
Choi, Sukwon
Cheng, Zhe
Higashiwaki, Masataka
[J]. APL MATERIALS, 2022, 10 (02)
[2] Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals
Islam, Ahmad Ehteshamul
Zhang, Chenyu
DeLello, Kursti
Muller, David A.
Leedye, Kevin D.
Ganguli, Sabyasachi
Moser, Neil A.
Kahler, Rachel
Williams, Jeremiah C.
DrydenO, Daniel M.
Tetlak, Stephen
Liddy, Kyle J.
Green, Andrew J.
Chabak, Kelson D.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (10) : 5656 - 5663
[3] Interface trapping in ((2)over-bar01) β-Ga2O3 MOS capacitors with deposited dielectrics
Jayawardena, Asanka
Ramamurthy, Rahul P.
Ahyi, Ayayi C.
Morisette, Dallas
Dhar, Sarit
[J]. APPLIED PHYSICS LETTERS, 2018, 112 (19)
[4] Deep UV-assisted capacitance-voltage characterization of post-deposition annealed Al2O3/β-Ga2O3 (001) MOSCAPs
Jian, Zhe
Mohanty, Subhajit
Ahmadi, Elaheh
[J]. APPLIED PHYSICS LETTERS, 2020, 116 (24)
[5] Intrinsic electron mobility limits in β-Ga2O3
Ma, Nan
Tanen, Nicholas
Verma, Amit
Guo, Zhi
Luo, Tengfei
Xing, Huili Grace
Jena, Debdeep
[J]. APPLIED PHYSICS LETTERS, 2016, 109 (21)
[6] Ge-Doped β-Ga2O3 MOSFETs
Moser, Neil
McCandless, Jonathan
Crespo, Antonio
Leedy, Kevin
Green, Andrew
Neal, Adam
Mou, Shin
Ahmadi, Elaheh
Speck, James
Chabak, Kelson
Peixoto, Nathalia
Jessen, Gregg
[J]. IEEE ELECTRON DEVICE LETTERS, 2017, 38 (06) : 775 - 778
[7] Noguchi M, 2017, INT EL DEVICES MEET
[8] Heteroepitaxial Growth of Single-Crystalline β-Ga2O3 on GaN/Al2O3 Using MOCVD
Seo, Dahee
Kim, Sunjae
Kim, Hyeong-Yun
Jeon, Dae-Woo
Park, Ji-Hyeon
Hwang, Wan Sik
[J]. CRYSTAL GROWTH & DESIGN, 2023, 23 (10) : 7090 - 7094
[9] Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method
Sumita, K.
Toprasertpong, K.
Takenaka, M.
Takagi, S.
[J]. APPLIED PHYSICS LETTERS, 2021, 119 (10)
[10] ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION
TAKAGI, S
TORIUMI, A
IWASE, M
TANGO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2357 - 2362

← 1 2 →