RETRACTED: Optoelectronic properties of copper-fused Zn(1-x) SCux grown nanofilms for solar cell devices (Retracted article. See vol. 18, 2025)

On glass substrates in a basic medium, Zn(1-x)SCux nanostructures were produced using a chemical bath approach for an adjusted dopant concentration (DC) (0.01-0.05 M) at 80 degrees C, and annealed at 300 degrees C for 2.5 h. The X-ray diffraction pattern revealed a alpha-ZnS phase in the produced films with a stronger diffraction peak at 31.775 degrees. The creation of a high crystalline structure in the alpha-ZnS phase is confirmed by Raman spectral analysis. SEM images revealed a uniform and dense surface morphology with modest grain size sharing and no fractures. The existence of anticipated Zn, S, and Cu was detected by energy-dispersive X-ray spectroscopy. Spectrophotometry in the UV-visible range showed a redshift. Additionally, as DC is increased, the optical band gaps (3.82-3.99 eV) and transmittance were observed to increased. The projected crystallite sizes (3.58-2.45 nm) based on energy band gaps shrank as DC increased. Infrared spectroscopy using the Fourier transform did not reveal any contaminant signals. The electrical conductivity was p-type, according to the Hall Effect investigation.