Electrostatic pull-in application in flexible devices: A review

被引:0
作者
Cai T. [1 ,2 ]
Fang Y. [1 ,2 ]
Fang Y. [1 ,2 ]
Li R. [1 ,2 ]
Yu Y. [1 ,2 ]
Huang M. [1 ,2 ]
机构
[1] College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing
[2] National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications, Nanjing
关键词
Electrostatics; MEMS; microfluidics; NEM switches; pull-in;
D O I
10.3762/BJNANO.13.32
中图分类号
学科分类号
摘要
The electrostatic pull-in effect is a common phenomenon and a key parameter in the design of microscale and nanoscale devices. Flexible electronic devices based on the pull-in effect have attracted increasing attention due to their unique ductility. This review summarizes nanoelectromechanical switches made by flexible materials and classifies and discusses their applications in, among others, radio frequency systems, microfluidic systems, and electrostatic discharge protection. It is supposed to give researchers a more comprehensive understanding of the pull-in phenomenon and the development of its applications. Also, the review is meant to provide a reference for engineers to design and optimize devices. © 2022. Cai et al.; licensee Beilstein-Institut. License and terms: see end of document
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收藏
页码:390 / 403
页数:13
相关论文
共 102 条
[1]  
Zhang W.-M., Yan H., Peng Z.-K., Meng G., Sens. Actuators, A, 214, pp. 187-218, (2014)
[2]  
Abbasi S. A., Kim T.-h., Somu S., Wang H., Chai Z., Upmanyu M., Busnaina A., J. Phys. D: Appl. Phys, 53, (2020)
[3]  
Cole M., Milne W., Materials, 6, pp. 2262-2273, (2013)
[4]  
Kaul A. B., Kowalczyk R., Megerian K., von Allmen P., Baron R. L., MRS Online Proc. Libr, 1081, (2008)
[5]  
Huynh Van N., Muruganathan M., Kulothungan J., Mizuta H., Nanoscale, 10, pp. 12349-12355, (2018)
[6]  
Sun J., Muruganathan M., Kanetake N., Mizuta H., Micromachines, 7, (2016)
[7]  
Mizuta H., Hammam A., Kulothungan J., Suzuki S., Schmidt M. E., Sun J., Muruganathan M., Recent Progress of Graphene-Based Nanoelectronic Devices and NEMS for Challenging Applications, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 474-477, (2016)
[8]  
Jasulaneca L., Livshits A. I., Meija R., Kosmaca J., Sondors R., Ramma M. M., Jevdokimovs D., Prikulis J., Erts D., Nanomaterials, 11, (2021)
[9]  
Meija R., Livshits A. I., Kosmaca J., Jasulaneca L., Andzane J., Biswas S., Holmes J. D., Erts D., Nanotechnology, 30, (2019)
[10]  
Kosmaca J., Meija R., Antsov M., Kunakova G., Sondors R., Iatsunskyi I., Coy E., Doherty J., Biswas S., Holmes J. D., Erts D., Nanoscale, 11, pp. 13612-13619, (2019)