Responsivity Characteristics of ZnO Schottky Ultraviolet Photodetectors with High Gain

被引：0
作者：
Duan Y. [1 ,2 ]
Jiang D. [1 ,2 ]
Zhao M. [1 ,2 ]
机构：
[1] School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun
[2] Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2023年 / 44卷 / 10期
基金：
中国国家自然科学基金;
关键词：
depletion layer; gain effect; responsivity; ultraviolet photodetector; ZnO;
D O I：
10.37188/CJL.20230169
中图分类号：
学科分类号：
摘要：
The wide bandgap semiconductor ZnO ultraviolet （UV） photodetector has many advantages， such as high stability， low cost， and has important application prospects in fields such as national defense， medical care， and environmental monitoring. In this work， ZnO thin films were fabricated on SiO2 substrate using radio frequency magnetron sputtering. Subsequently， a ZnO UV photodetector with a high-gain metal-semiconductor-metal （MSM） structure was achieved. At a bias voltage of 10 V， the detector exhibited a responsivity of 4.90 A/W and an external quantum efficiency of 1668%. This high gain was attributed to the hole trapping at the semiconductor-metal interface under illumination. Furthermore， the modulation rules and influence mechanisms of gain effect， applied bias voltage， and depletion layer width on the responsivity of ZnO UV photodetector were thoroughly investigated. This research provides an important reference for the development and performance control of high-performance UV photodetectors. © 2023 Chines Academy of Sciences. All rights reserved.
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页码：1816 / 1823
页数：7
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