Dielectric engineered graphene transistors for high-performance near-infrared photodetection

Graphene, known for its ultrahigh carrier mobility and broadband optical absorption, holds significant potential in optoelectronics. However, the carrier mobility of graphene on silicon substrates experienced a marked decrease due to surface roughness, phonon scattering affects. Here we report carrier mobility enhancement of graphene dielectric engineering. Through the fabrication of devices utilizing Si/SiO2/Al2O3/graphene layers and subsequent electrical characterization, our findings illustrate the navigable nature of the Al2O3 dielectric layer is navigable for reducing the SiO2 phonon scattering and increasing graphene's carrier mobility by up to 8000 cm2V-1s-1. Furthermore, the improvement in carrier mobility of graphene has been utilized in the hybrid near -infrared photodetector, resulting in outstanding responsivity of -400 AW-1, detectivity of -2.2 ✕ 1011 Jones in the graphene/Ag2Te detector. Our study establishes pathways for the seamless integration of graphene or other 2D materials within the standard CMOS processes, thereby facilitating the fabrication of advanced optoelectronic devices.