Filamentary-based organic memristors for wearable neuromorphic computing systems

被引:6
作者
Beak, Chang-Jae [1 ]
Lee, Jihwan [1 ]
Kim, Junseok [1 ]
Park, Jiwoo [1 ]
Lee, Sin-Hyung [2 ]
机构
[1] Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 702701, South Korea
[2] Univ Seoul, Sch Adv Fus Studies, 163 Seoulsiripdaero, Seoul 02504, South Korea
来源
NEUROMORPHIC COMPUTING AND ENGINEERING | 2024年 / 4卷 / 02期
基金
新加坡国家研究基金会;
关键词
organic memristor; neuromorphic system; conductive filament; continuous conductance level; synaptic plasticity; SYNAPTIC DEVICE; MEMORY; SYNAPSES; NETWORKS; CIRCUITS;
D O I
10.1088/2634-4386/ad409a
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A filamentary-based organic memristor is a promising synaptic component for the development of neuromorphic systems for wearable electronics. In the organic memristors, metallic conductive filaments (CF) are formed via electrochemical metallization under electric stimuli, and it results in the resistive switching characteristics. To realize the bio-inspired computing systems utilizing the organic memristors, it is essential to effectively engineer the CF growth for emulating the complete synaptic functions in the device. Here, the fundamental principles underlying the operation of organic memristors and parameters related to CF growth are discussed. Additionally, recent studies that focused on controlling CF growth to replicate synaptic functions, including reproducible resistive switching, continuous conductance levels, and synaptic plasticity, are reviewed. Finally, upcoming research directions in the field of organic memristors for wearable smart computing systems are suggested.
引用
收藏
页数:13
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