Multi-mode active switching strategy for safe operating area of Si/SiC-hybrid-switch-based inverter throughout life cycle

被引:0
作者
Tu C. [1 ]
Han S. [1 ]
Long L. [1 ]
Xiao F. [1 ]
Xiao B. [1 ]
Guo Q. [1 ]
机构
[1] National Electric Power Conversion and Control Engineering Technology Research Center, Hunan University, Changsha
来源
Dianli Zidonghua Shebei/Electric Power Automation Equipment | 2023年 / 43卷 / 10期
基金
中国国家自然科学基金;
关键词
full life cycle; hybrid switch; multi-mode switching; reliability; safe operating area;
D O I
10.16081/j.epae.202309013
中图分类号
学科分类号
摘要
By adopting a multi-mode switching strategy for the Si insulate-gate bipolar transistor(Si IGBT)/SiC metal-Oxide semiconductor field-effect transistor(SiC MOSFET) hybrid switch,the converter has the ability to cope with complex operating conditions. However,the influence of fatigue aging on the mode switching threshold current is not considered in the existing switching strategies,which is likely to cause thermal failure of the hybrid switch at the late stage of the aging process,which seriously threatens the reliable operation of the converter. Based on this,a multi-mode active switching strategy for safe operating area of Si/SiC-hybrid-switch-based inverter throughout life cycle is proposed. Based on the influence of fatigue aging on the maximum safe operating current of inverter,the characterization process of the safe working area of the inverter considering the aging process is designed. According to the results of safe operating area characterization,a multi-switching mode active switching strategy suitable for the whole life cycle of hybrid switch is proposed. The experimental results show that the strategy can dynamically adjust the switching mode to converse threshold current for different aging degrees of hybrid switch,so as to ensure the operation reliability of the inverter throughout the switch whole life cycle. © 2023 Electric Power Automation Equipment Press. All rights reserved.
引用
收藏
页码:128 / 135
页数:7
相关论文
共 21 条
[1]  
YUAN T S, KANG Y H,, Et al., Review of Si IGBT and SiC MOSFET based on hybrid switch[J], Chinese Journal of Electrical Engineering, 5, 3, pp. 20-29, (2019)
[2]  
SHENG Kuang, REN Na, XU Hongyi, A recent review on silicon carbide power devices technologies[J], Proceedings of the CSEE, 40, 6, pp. 1741-1753, (2020)
[3]  
DENG Qinrui, HE Yingjie, LEI Chao, Et al., PFM+PSM hybrid control of CLLLC resonant converter[J], Electric Power Automation Equipment, 42, 2, pp. 148-154, (2022)
[4]  
BO Qiang, WANG Lifang, ZHANG Yuwang, Et al., Analysis of turn-off characteristics of SiC MOSFET applied to wireless charging system[J], Automation of Electric Power Systems, 45, 15, pp. 150-157, (2021)
[5]  
QIN H H, Et al., Evaluation and suppression method of turn-off current spike for SiC/Si hybrid switch[J], IEEE Access, 11, pp. 26832-26842, (2023)
[6]  
JIANG X F, JIANG H P,, ZHONG X H,, Et al., Impact of gate resistance on improving the dynamic overcurrent stress of the Si/SiC hybrid switch[J], IEEE Transactions on Power Electronics, 37, 11, pp. 13319-13331, (2022)
[7]  
WOLDEGIORGIS D, HOSSAIN M M,, SAADATIZADEH Z,, Et al., Hybrid Si/SiC switches:a review of control objectives,gate driving approaches and packaging solutions[J], IEEE Journal of Emerging and Selected Topics in Power Electronics, 11, 2, pp. 1737-1753, (2023)
[8]  
NING P Q,, WEN X H,, Et al., A 30 kW three-phase voltage source inverter based on the Si IGBT/SiC MOSFET hybrid switch, IEEE Applied Power Electronics Conference and Exposition, pp. 1397-1401, (2019)
[9]  
ZHANG C, Et al., Dynamic gate delay time control of Si/SiC hybrid switch for loss minimization in voltage source inverter[J], IEEE Journal of Emerging and Selected Topics in Power Electronics, 10, 4, pp. 4160-4170, (2022)
[10]  
PENG Z S, Et al., Adaptive gate delay-time control of Si/SiC hybrid switch for efficiency improvement in inverters[J], IEEE Transactions on Power Electronics, 36, 3, pp. 3437-3449, (2021)