Surface-state-related carrier dynamics of GaAs determined by UV-visible pump-probe terahertz spectroscopy

被引：1
|
作者：
Zhai, D. [1 ]
Herault, E. [2 ]
Garet, F. [2 ]
Coutaz, J. -l. [2 ]
机构：
[1] Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
[2] Univ Savoie Mont Blanc, Univ Grenoble Alpes, CNRS, Grenoble INP,CROMA, F-38000 Grenoble, France
来源：
APPLIED PHYSICS LETTERS | 2024年 / 124卷 / 16期
基金：
中国国家自然科学基金;
关键词：
AUGER RECOMBINATION; INP; GAP; SEMICONDUCTORS; RELAXATION; TRANSPORT; LIFETIME;
D O I：
10.1063/5.0198347
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The surface velocity and the bulk lifetime of photo-excited free carriers in GaAs were measured using an optical-pump and THz-probe time-domain technique. By varying the pump laser photon energy from 1.56 to 4.15 eV, we observe that the surface velocity drops abruptly from 0.7x10(6) cm/s down to 0.2x10(6) cm/s at 2.5 eV, while the bulk lifetime remains almost constant. We tentatively explain this step-like behavior of the surface velocity vs the photon energy by a trapping of the free carriers at surface states, whose density of states shows a maximum at 2.5 eV.
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页数：5
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