Efficient photocatalytic hydrogen evolution based on a Z-scheme 2D LaVO4/2D Mo-doped SV-ZnIn2S4 heterojunction

被引:4
|
作者
Guan, Wei [1 ]
Zhang, Lin [1 ]
Wang, Peng [1 ]
Wang, Ying [1 ]
Wang, Haoyu [1 ]
Dong, Xingchen [1 ]
Yu, Liyan [1 ]
Gan, Zhixing [1 ,2 ]
Dong, Lifeng [1 ]
Sui, Lina [1 ]
机构
[1] Qingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R China
[2] Nanjing Normal Univ, Ctr Future Optoelect Funct Mat, Sch Comp & Elect Informat, Sch Artificial Intelligence, Nanjing 210023, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
ZNIN2S4; MONOLAYER; VACANCIES;
D O I
10.1039/d4ta00754a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The purposeful design and construction of two-dimensional (2D) semiconductor heterojunctions offers a promising avenue for achieving efficient photocatalytic activity. However, it remains a challenge to enable efficient charge migration at the interface. In this study, we successfully prepare 2D ultrathin Z-scheme heterojunctions based on LaVO4 and ZnIn2S4 (ZIS) with excellent contact interfaces and robust internal electric fields through oxygen vacancy and sulfur vacancy (S-V) induction and molybdenum atom doping. Surface defects facilitate the formation of 2D heterojunctions. The optimized heterojunction exhibits outstanding photocatalytic hydrogen evolution performance (8.67 mmol g(-1) h(-1)) with an apparent quantum efficiency (lambda > 420 nm) of 30.57%. Mechanistic analysis and theoretical calculations demonstrate that the molybdenum atoms promote interfacial charge transfer and enhance the internal electric field between the LaVO4 and S-V-MZIS interfaces, ultimately leading to the formation of a Z-scheme charge transfer channel. This work establishes an engineering design model for atomic-scale 2D interfaces with modulated charge transfer.
引用
收藏
页码:12181 / 12189
页数:9
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