High Peak Power Ho : YLF Amplifier at 2.05 μm Seeded by an Electro-Optically Diode-Pumped Ho :GdVO4 Laser

被引：0

作者：

Dai, Wantian ^{[1
]}

Liu, Tongyu ^{[2
]}

Ding, Yu ^{[2
]}

Yan, Mengmeng ^{[2
]}

Zhang, Yongning ^{[2
]}

Zhao, Yuwei ^{[2
]}

机构：

[1] China Elect Technol Corp, Res Inst 53, Tianjin 300308, Peoples R China

[2] Natl Key Lab Electromagnet Space Secur, Tianjin 300308, Peoples R China

来源：

JOURNAL OF RUSSIAN LASER RESEARCH | 2024年 / 45卷 / 03期

关键词：

high peak power; Ho :YLF amplifier; Ho :GdVO4 laser; diode pumping; ZGP-OPO;

D O I：

10.1007/s10946-024-10214-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this study, we present a high peak power Ho :YLF amplifier seeded by an electro-optically diodepumped Ho :GdVO(4 )laser operating at 2.05 mu m. The diode-pumped Ho :GdVO4 laser, operating under a continuous-wave (CW) regime, achieved an output power of 7.1 W at an absorbed pump power of 28 W, resulting in a slope efficiency of 41.4%. At a repetition rate of 1 kHz, the laser delivered an average output power of 3.6 W with a pulse width of 4.3 ns. By utilizing a Ho :YLF crystal as the amplification medium, with a seed power of 3 W and an incident pump power of 22.5 W, the amplifier generates an average output power of 15.5 W with a pulse width of 4.5 ns. We calculate the maximum pulse energy and peak power to be 15.5 mJ and 3.4 MW, respectively.

引用

页码：295 / 299

页数：5

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