Filament-based memristor switching model

被引：0
|
作者：
Fadeev, A. V. [1 ]
Rudenko, K. V. [1 ]
机构：
[1] Russian Acad Sci, Valiev Inst Phys & Technol, Moscow 117218, Russia
来源：
MICROELECTRONIC ENGINEERING | 2024年 / 289卷
关键词：
Conductive filament evolution; Memristors switching;
D O I：
10.1016/j.mee.2024.112179
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The filaments rupture and recovery in oxide-type memristors have been theoretically studied. The model is based on the kinetics of oxygen vacancies and includes Joule heating of the oxide medium, which enhances the diffusion and drift of oxygen vacancies in an external electric field. The current-voltage characteristic of the model structure was obtained. Comparison with experimental results allowed for the determination of the constants used in the modeling. The peculiarity of the current-voltage characteristic observed in experimental works is explained.
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页数：8
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