Improved polarization by interface layer insertion in ferroelectric HfO2-based MFM capacitors

被引：1
|
作者：
Suenbuel, Ayse [1 ]
Lehninger, David [1 ]
Lederer, Maximilian [1 ]
Kaempfe, Thomas [1 ]
Seidel, Konrad [1 ]
Eng, Lukas M. [2 ]
机构：
[1] Fraunhofer Inst Photon Microsyst IPMS, Ctr Nanoelect Technol CNT, D-01109 Dresden, Germany
[2] Tech Univ Dresden, Inst Angew Phys, D-01187 Dresden, Germany
来源：
2023 IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, ISAF | 2023年
关键词：
ferroelectric; hafnium oxide; interface layer;
D O I：
10.1109/ISAF53668.2023.10265559
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hafnium zirconium oxide (HZO) is a promising material for ferroelectric non-volatile memory devices as it has low crystalline temperatures and hence is back-end-of-line compatible, is complementary metal-oxide-semiconductor technology compatible (CMOS) as well as offers thickness scalability advantages. Here, we study the insertion of the SiO2 and Al2O3 interface layers in ferroelectric HZO-based MFM capacitors in terms of ferroelectric behavior. By using such interface layers, an outstanding 2P(r) value of around 60 mu C/cm(2) can be achieved.
引用
收藏
页数：4
相关论文
共 50 条
  • [11] Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs
    Mulaosmanovic, Halid
    Duenkel, Stefan
    Mueller, Johannes
    Trentzsch, Martin
    Beyer, Sven
    Breyer, Evelyn T.
    Mikolajick, Thomas
    Slesazeck, Stefan
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (09) : 1420 - 1423
  • [12] HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial
    蒋然
    吴正冉
    韩祖银
    Hyung-Suk Jung
    Chinese Physics B, 2016, 25 (10) : 303 - 307
  • [13] Root cause of degradation in novel HfO2-based Ferroelectric Memories
    Pesic, Milan
    Fengler, Franz P. G.
    Slesazeck, Stefan
    Schroeder, Uwe
    Mikolajick, Thomas
    Larcher, Luca
    Padovani, Andrea
    2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016,
  • [14] One Nanometer HfO2-Based Ferroelectric Tunnel Junctions on Silicon
    Cheema, Suraj S.
    Shanker, Nirmaan
    Hsu, Cheng-Hsiang
    Datar, Adhiraj
    Bae, Jongho
    Kwon, Daewoong
    Salahuddin, Sayeef
    ADVANCED ELECTRONIC MATERIALS, 2022, 8 (06)
  • [15] HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial
    Jiang, Ran
    Wu, Zheng-Ran
    Han, Zu-Yin
    Jung, Hyung-Suk
    CHINESE PHYSICS B, 2016, 25 (10)
  • [16] Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor
    Min, Jinhong
    Ronchi, Nicolo
    McMitchell, Sean R. C.
    O'Sullivan, Barry
    Banerjee, Kaustuv
    Van den Bosch, Geert
    Van Houdt, Jan
    Shin, Changhwan
    IEEE ELECTRON DEVICE LETTERS, 2021, 42 (09) : 1280 - 1283
  • [17] Recent Progress on Energy-Related Applications of HfO2-Based Ferroelectric and Antiferroelectric Materials
    Ali, Faizan
    Zhou, Dayu
    Ali, Mohsin
    Ali, Hafiz Waqas
    Daaim, Muhammad
    Khan, Sheeraz
    Hussain, Muhammad Muzammal
    Sun, Nana
    ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (08) : 2301 - 2317
  • [18] Review and perspective on ferroelectric HfO2-based thin films for memory applications
    Park, Min Hyuk
    Lee, Young Hwan
    Mikolajick, Thomas
    Schroeder, Uwe
    Hwang, Cheol Seong
    MRS COMMUNICATIONS, 2018, 8 (03) : 795 - 808
  • [19] Perspective Roadmap of Advanced HfO2-based Ferroelectric Field Effect Transistors
    De, Sourav
    Cho, Chen-Yi
    Ali, Tarek
    Banerjee, Writam
    Ramirez, Lucia Perez
    Barrett, Nick
    Majumder, Sayani
    Hou, Tuo-Hung
    8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024, 2024, : 511 - 513
  • [20] Evaluation of HfO2-Based Ferroelectric Resonant Tunnel Junction by Band Engineering
    Chang, Pengying
    Xie, Yiyang
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (01) : 168 - 171
12345