Transient Performance Comparative of SiC and Radio Frequency Si MOSFET for Modular High-voltage Nanosecond Pulse Generator

被引：0

作者：

Ma J. ^{[1
]}

He Y. ^{[1
]}

Yu L. ^{[1
]}

Dong S. ^{[1
]}

Yao C. ^{[1
]}

机构：

[1] State Key Laboratory of Power Transmission Equipment & System Security and New Technology (Chongqing University), Shapingba District, Chongqing

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2020年 / 40卷 / 06期

基金：

中国国家自然科学基金;

关键词：

High voltage; Metal-oxide-semiconductor field-effect transistor (MOSFET); Nanosecond short pulse; Pulse power generator; Radio frequency (RF); Silicon carbide (SiC);

D O I：

10.13334/j.0258-8013.pcsee.190747

中图分类号：

学科分类号：

摘要：

Silicon carbide (SiC) metal-oxide-semi-conductor field-effect transistor (MOSFET) has lower on-resistance, higher flow-through capability and thermal stability than Si MOSFET. However, radio frequency silicon (RF-Si) MOSFET is more popular than SiC MOSFET in high voltage nanosecond pulse generator because of its excellent dynamic characteristics. In order to expand the application scope of SiC MOSFET, we compared the transient characteristics (dynamic characteristics this paper, transient turn on-off loss, time jitter) of RF-Si and SiC MOSFET under multi-pulse parameters, and focused on revealing the difference of switching characteristics between the two semiconductor devices under transient high voltage and strong current. The experimental results show that the advantages of SiC MOSFET are reflected in the turn-on and turn-off time compared with RF-Si MOSFET. However, due to the influence of parasitic parameters, SiC MOSFET exhibits greater oscillation and overshoot, while it has no obvious advantages in terms of transient turn on-off loss and time jitter. Therefore, the improvement of SiC MOSFET package to reduce parasitic parameters will be of great significance for the widespread application of SiC MOSFET in high voltage nanosecond pulse generator. © 2020 Chin. Soc. for Elec. Eng.

引用

页码：1817 / 1828

页数：11

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