Klein tunneling through the trapezoidal potential barrier in graphene: Conductance and shot noise

被引：3
作者：
Paraoanu G.S. [1 ]
机构：
[1] QTF Centre of Excellence, Department of Applied Physics, Aalto University, School of Science, P.O. Box 15100, AALTO
来源：
New Journal of Physics | 2021年 / 23卷 / 04期
基金：
欧盟地平线“2020”;
关键词：
Doping; Electrical conductivity; Fano factor; Graphene; Klein tunneling;
D O I：
10.1088/1367-2630/abe1e6
中图分类号：
学科分类号：
摘要：
When a single-layer graphene sheet is contacted with metallic electrodes, tunnel barriers are formed as a result of the doping of graphene by the metal in the contact region. If the Fermi energy level is modulated by a gate voltage, the phenomenon of Klein tunneling results in specific features in the conductance and noise. Here we obtain analytically exact solutions for the transmission and reflection probability amplitudes using a trapezoidal potential barrier, allowing us to calculate the differential conductance and the Fano factor for a graphene sheet in the ballistic regime.We put in evidence an unexpected global symmetry-the transmission probability is the same for energies symmetric with respect to half of the barrier height.We outline a proposal for the experimental verification of these ideas using realistic sample parameters. © 2021 The Author(s).
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