Forming-Free and Non-linear Resistive Switching in Bilayer HfOx\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {HfO}_{\textrm{x}}$$\end{document}/TaOx\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {TaO}_{\textrm{x}}$$\end{document} Memory Devices by Interface-Induced Internal Resistance

被引：0

作者：

Mari Napari ^{[1
]}

Spyros Stathopoulos ^{[2
]}

Themis Prodromakis ^{[1
]}

Firman Simanjuntak ^{[3
]}

机构：

[1] University of Southampton,School of Electronics and Computer Science

[2] King’s College London,Department of Physics

[3] University of Edinburgh,School of Engineering

来源：

关键词：

Resistive switching; Memory devices; Oxides; Atomic layer deposition;

D O I：

10.1007/s13391-023-00481-w

中图分类号：

学科分类号：

摘要：

引用

页码：363 / 371

页数：8

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