Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition

被引：0

作者：

Nabatame, Toshihide ^{[1
]}

Maeda, Erika ^{[1
,2
]}

Inoue, Mari ^{[1
]}

Hirose, Masafumi ^{[1
,2
]}

Irokawa, Yoshihiro ^{[1
]}

Ohi, Akihiko ^{[1
]}

Ikeda, Naoki ^{[1
]}

Onaya, Takashi ^{[1
]}

Shiozaki, Koji ^{[3
]}

Ochi, Ryota ^{[4
]}

Hashizume, Tamotsu ^{[4
]}

Koide, Yasuo ^{[1
]}

机构：

[1] National Institute for Materials Science (NIMS), 1-1 Namiki, Ibaraki,305-0044, Japan

[2] Shibaura Institute of Technology, 3-7-5 Toyosu, Tokyo,135-8548, Japan

[3] Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya,464-8601, Japan

[4] Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo,060-0813, Japan

来源：

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 2021年 / 39卷 / 06期

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