Short-Circuit Protection for SiC MOSFET Based on PCB-Type Rogowski Current Sensor: Design Guidelines, Practical Solutions, and Performance Validation

In this article, a robust short-circuit (SC) protection circuit using Rogowski current sensor (RCS) for SiC mosfet-based power conversion systems is proposed, along with the detailed theoretical design guidelines of the proposed RCS. The proposed RCS circuit is designed to mitigate sensing errors and achieve high sensing performance, which is verified through the double pulse test. Subsequently, the verified RCS is applied to the proposed SC protection circuit, and protection performances are experimentally validated with fault under load (FUL), hard-switching fault (HSF), and a 5 kW three-phase pulsewidth modulation (PWM) rectifier. The experimental results demonstrate successful SC protection within approximately 500 ns under FUL, HSF, and 520 ns under the 5 kW three-phase PWM rectifier.