Deposition and Optical Characterization of Sputter Deposited p-Type Delafossite CuGaO2 Thin Films Using Cu2O and Ga2O3 Targets

CuGaO2 thin films were deposited using the RF magnetron sputtering technique using Cu2O and Ga2O3 targets. The films were deposited at room temperature onto a quartz slide. The sputtering power of Cu2O remained constant at 50 W, while the sputtering power of Ga2O3 was systematically varied from 150 W to 200 W. The films were subsequently subjected to annealing at temperatures of 850 degrees C and 900 degrees C in a nitrogen atmosphere for a duration of 5 h. XRD analysis on films deposited with a Ga2O3 sputtering power of 175 W annealed at 900 degrees C revealed the development of nearly single-phase delafossite CuGaO2 thin films. SEM images of films annealed at 900 degrees C showed an increasing trend in grain size with a change in sputtering power level. Optical studies performed on the film revealed a transmission of 84.97% and indicated a band gap of approximately 3.27 eV. The film exhibited a refractive index of 2.5 within the wavelength range of 300 to 450 nm.