Deposition and Optical Characterization of Sputter Deposited p-Type Delafossite CuGaO2 Thin Films Using Cu2O and Ga2O3 Targets

被引：4

作者：

Bharath, Akash Hari ^{[1
]}

Saikumar, Ashwin Kumar ^{[1
]}

Sundaram, Kalpathy B. ^{[1
]}

机构：

[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32826 USA

来源：

MATERIALS | 2024年 / 17卷 / 07期

关键词：

transparent conducting oxides; TCO; CuGaO2; delafossite; p-type; RF Sputtering; XRD; XPS; SEM; optical transmission; optical bandgap; ELECTRONIC-STRUCTURE; CONDUCTION;

D O I：

10.3390/ma17071609

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

CuGaO2 thin films were deposited using the RF magnetron sputtering technique using Cu2O and Ga2O3 targets. The films were deposited at room temperature onto a quartz slide. The sputtering power of Cu2O remained constant at 50 W, while the sputtering power of Ga2O3 was systematically varied from 150 W to 200 W. The films were subsequently subjected to annealing at temperatures of 850 degrees C and 900 degrees C in a nitrogen atmosphere for a duration of 5 h. XRD analysis on films deposited with a Ga2O3 sputtering power of 175 W annealed at 900 degrees C revealed the development of nearly single-phase delafossite CuGaO2 thin films. SEM images of films annealed at 900 degrees C showed an increasing trend in grain size with a change in sputtering power level. Optical studies performed on the film revealed a transmission of 84.97% and indicated a band gap of approximately 3.27 eV. The film exhibited a refractive index of 2.5 within the wavelength range of 300 to 450 nm.

引用

页数：13

共 52 条

[1] TRANSPARENT CONDUCTING OXIDE FILMS FOR VARIOUS APPLICATIONS: A REVIEW [J].