Direct fabrication and characterization of vertically stacked Graphene/h-BN/Graphene tunnel junctions

被引：3
作者：
Alzahrani A. [1 ,2 ]
Alruqi A. [3 ]
Karki B. [1 ]
Kalutara Koralalage M. [1 ]
Jasinski J. [4 ]
Sumanasekera G. [1 ,4 ]
机构：
[1] Department of Physics and Astronomy, University of Louisville, Louisville, 40292, KY
[2] Department of Physics, Al-Qunfudah University College, Umm Al-Qura University, Makkah
[3] Department of Physics, King Abdulaziz University, Jeddah
[4] Conn Center for Renewable Energy Research, University of Louisville, Louisville, 40292, KY
来源：
Nano Express | 2021年 / 2卷 / 04期
关键词：
2D-materials; chemical vapor deposition; graphene; h-BN; heterostructures; negative differential resistance; resonant tunneling;
D O I：
10.1088/2632-959X/ac2e9e
中图分类号：
学科分类号：
摘要：
We have used a lithography free technique for the direct fabrication of vertically stacked two-dimensional (2D) material-based tunnel junctions and characterized by Raman, AFM, XPS. We fabricated Graphene/h-BN/Graphene devices by direct deposition of graphene (bottom layer), h-BN (insulating barrier) and graphene (top layer) sequentially using a plasma enhanced chemical vapor deposition on Si/SiO2 substrates. The thickness of the h-BN insulating layer was varied by tuning the plasma power and the deposition time. Samples were characterized by Raman, AFM, and XPS. The I-V data follows the barrier thickness dependent quantum tunneling behavior for equally doped graphene layers. The resonant tunneling behavior was observed at room temperature for oppositely doped graphene layers where hydrazine and ammonia were used for n-doping of one of the graphene layers. The resonance with negative differential conductance occurs when the band structures of the two electrodes are aligned. The doping effect of the resonant peak is observed for varying doping levels. The results are explained according to the Bardeen tunneling model. © 2021 The Author(s). Published by IOP Publishing Ltd.
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