Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas

被引：0
作者：
Tiantian Wang [1 ]
Huading Song [3 ]
Ke He [1 ]
机构：
[1] Beijing Academy of Quantum Information Sciences, Beijing
[2] State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing
[3] Hefei National Laboratory, Hefei
来源：
Quantum Frontiers | / 3卷 / 1期
基金：
中国国家自然科学基金;
关键词：
Electron mobility; III-V semiconductors; Molecular beam epitaxy; Two-dimensional electron gas;
D O I：
10.1007/s44214-024-00061-5
中图分类号：
学科分类号：
摘要：
This review aims to provide a comprehensive overview of the development and current understanding of GaAs and InAs heterostructures, with a special emphasis on achieving high material quality and high-mobility two-dimensional electron gases (2DEGs). The review discusses the evolution of structural designs that have significantly contributed to the enhancement of electron mobility, highlighting the critical considerations of scattering mechanisms of the 2DEGs. In addition, this review examines the substantial contributions of Molecular Beam Epitaxy (MBE) to these developments, particularly through advancements in vacuum technology, source material purification, and precision control of growth conditions. The intent of this review is to serve as a useful reference for researchers and practitioners in the field, offering insights into the historical progression and technical details of these semiconductor systems. © The Author(s) 2024.
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