Fast Short-circuit Protection under Current Imbalance Condition for Multi-Paralleled SiC-MOSFETs

被引：0
|
作者：
Suzuki, Hiroshi [1 ]
Funaki, Tsuyoshi [2 ]
机构：
[1] Research and Development Group, Hitachi, Ltd., 7-1-1, Omika-cho, Hitachi, Ibaraki,319-1292, Japan
[2] Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka,565-0871, Japan
来源：
IEEJ Transactions on Industry Applications | 2023年 / 143卷 / 01期
关键词：
Engineering Village;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Condition - Current detection - Current imbalances - Fast current detection - Gate drive circuits - Integration circuits - Multi-paralleled die - Short-circuit currents - Short-circuit protection - SiC MOSFETs
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页码：35 / 45
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