Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion-Implanted GaN

被引：7

作者：

Kano, Emi ^{[1
]}

Uzuhashi, Jun ^{[2
]}

Kobayashi, Koki ^{[3
]}

Ishikawa, Kosuke ^{[3
]}

Sawabe, Kyosuke ^{[3
]}

Narita, Tetsuo ^{[4
]}

Sierakowski, Kacper ^{[5
]}

Bockowski, Michal ^{[3
,5
]}

Ohkubo, Tadakatsu ^{[2
]}

Kachi, Tetsu ^{[1
]}

Ikarashi, Nobuyuki ^{[1
]}

机构：

[1] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan

[2] Natl Inst Mat Sci, Tsukuba 3050047, Japan

[3] Nagoya Univ, Grad Sch Engn, Dept Elect, Nagoya, Aichi 4648603, Japan

[4] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

[5] Polish Acad Sci, Polish Acad Sci, Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2024年 / 18卷 / 09期

关键词：

GaN; Mg; N ion-implantation; transmission electron microscopy; ACTIVATION; TEMPERATURE;

D O I：

10.1002/pssr.202400074

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the Mg ion-implanted region and the underlying region after activation annealing. The impact of sequential N ion implantation on defects and Mg distribution after postimplantation annealing is investigated. The atomic-resolution analyses show that, in the Mg ion-implanted region, the N ion implantation increases the concentration of MgGa. It is thus concluded that the Mg soluble in GaN by Mg ion implantation is increased by N ion implantation. The rest of the Mg atoms agglomerate to form clusters on the extended defects, and their concentration is also increased by the N implantation. The coarsening of extended defects is suppressed by the N ion implantation: the defects in the Mg+N-implanted sample are nanoscale interstitial-type defects, and they do not grow or annihilate after annealing. This indicates that the N implantation changes the concentrations of interstitials. In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the implanted region. The effects of N ion implantation on defects and Mg distribution are investigated. In the ion-implanted region, the N ion implantation increases Mg acceptor concentration. The remaining Mg atoms cluster on extended defects, with their concentration also increased by N implantation.image (c) 2024 WILEY-VCH GmbH

引用

页数：6

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