Perspective on defect characterization in semiconductors by positron annihilation spectroscopy

被引：7

作者：

Makkonen, Ilja ^{[1
]}

Tuomisto, Filip ^{[2
,3
]}

机构：

[1] Univ Helsinki, Dept Phys, POB 43, FI-00014 Helsinki, Finland

[2] Univ Helsinki, Dept Phys, POB 43, FI-00014 Helsinki, Finland

[3] Univ Helsinki, Helsinki Inst Phys, POB 43, FI-00014 Helsinki, Finland

来源：

JOURNAL OF APPLIED PHYSICS | 2024年 / 135卷 / 04期

关键词：

GA VACANCIES; GALLIUM; SURFACE; DONORS;

D O I：

10.1063/5.0180024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This Perspective focuses on experimental and theoretical aspects of positron annihilation spectroscopy. This set of methods is highly suitable for identifying and quantifying vacancy-type defects in semiconductors and also allows for analyzing their physics characteristics. We present selected examples from the past decade, where the methods have been used for obtaining timely and useful insights into the defect-controlled phenomenon in narrow-gap (Ge, GaSb) and wide-gap (III-nitride, oxide) semiconductors. We also discuss possible future developments that may allow more detailed studies in novel semiconductor materials and devices with ever more complex lattice structures.

引用

页数：17

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