Understanding Quasi-Static and Dynamic Characteristics of Organic Ferroelectric Field Effect Transistors

被引:0
作者
Ke, Hanjing [1 ]
Liang, Xiaoci [1 ]
Yin, Xiaozhe [2 ]
Liu, Baiquan [1 ]
Han, Songjia [3 ]
Jiang, Shijie [4 ]
Liu, Chuan [1 ]
She, Xiaojian [4 ]
机构
[1] Sun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
[2] Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China
[3] South China Agr Univ, Coll Elect Engn, Guangzhou 510642, Peoples R China
[4] Zhejiang Univ, Coll Opt Sci & Engn, Hangzhou 310027, Peoples R China
关键词
ferroelectric; compact model; organic field effect transistors; synaptic; MEMORY; MODEL; EXTRACTION; PHYSICS;
D O I
10.3390/mi15040467
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Leveraging poly(vinylidene fluoride-trifluoroethylene) [(PVDF-TrFE)] as the dielectric, we fabricated organic ferroelectric field-effect transistors (OFe-FETs). These devices demonstrate quasi-static transfer characteristics that include a hysteresis window alongside transient phenomena that bear resemblance to synaptic plasticity-encapsulating excitatory postsynaptic current (EPSC) as well as both short-term and long-term potentiation (STP/LTP). We also explore and elucidate other aspects such as the subthreshold swing and the hysteresis window under dynamic state by varying the pace of voltage sweeps. In addition, we developed an analytical model that describes the electrical properties of OFe-FETs, which melds an empirical formula for ferroelectric polarization with a compact model. This model agrees well with the experimental data concerning quasi-static transfer characteristics, potentially serving as a quantitative tool to improve the understanding and design of OFe-FETs.
引用
收藏
页数:10
相关论文
共 25 条
  • [1] Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors
    Aziz, Ahmedullah
    Ghosh, Swapnadip
    Datta, Suman
    Gupta, Sumeet Kumar
    [J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (06) : 805 - 808
  • [2] Organicferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications
    Bae, Insung
    Kang, Seok Ju
    Park, Youn Jung
    Furukawa, T.
    Park, Cheolmin
    [J]. CURRENT APPLIED PHYSICS, 2010, 10 (01) : E54 - E57
  • [3] Physics of organic ferroelectric field-effect transistors
    Brondijk, Jakob J.
    Asadi, Kamal
    Blom, Paul W. M.
    de Leeuw, Dago M.
    [J]. JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 2012, 50 (01) : 47 - 54
  • [4] New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions
    Cerdeira, A
    Estrada, M
    García, R
    Ortiz-Conde, A
    Sánchez, FJG
    [J]. SOLID-STATE ELECTRONICS, 2001, 45 (07) : 1077 - 1080
  • [5] Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memory
    Chang, Jiyoun
    Shin, Chang Hak
    Park, Youn Jung
    Kang, Seok Ju
    Jeong, Hee June
    Kim, Kap Jin
    Hawker, Craig J.
    Russell, Thomas P.
    Ryu, Du Yeol
    Park, Cheolmin
    [J]. ORGANIC ELECTRONICS, 2009, 10 (05) : 849 - 856
  • [6] Accurate modeling and parameter extraction method for organic TFTs
    Estrada, A
    Cerdeira, A
    Puigdollers, J
    Reséndiz, L
    Pallares, J
    Marsal, LF
    Voz, C
    Iñiguez, B
    [J]. SOLID-STATE ELECTRONICS, 2005, 49 (06) : 1009 - 1016
  • [7] High Performance Multi-Level Non-Volatile Polymer Memory with Solution-Blended Ferroelectric Polymer/High-k Insulators for Low Voltage Operation
    Hwang, Sun Kak
    Bae, Insung
    Cho, Suk Man
    Kim, Richard Hahnkee
    Jung, Hee Joon
    Park, Cheolmin
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2013, 23 (44) : 5484 - 5493
  • [8] On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region
    Jin, Chengji
    Saraya, Takuya
    Hiramoto, Toshiro
    Kobayashi, Masaharu
    [J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01): : 368 - 374
  • [9] Low-voltage-operated top-gate polymer thin-film transistors with high capacitance poly(vinylidene fluoride-trifluoroethylene)/poly(methyl methacrylate) dielectrics
    Jung, Soon-Won
    Baeg, Kang-Jun
    Yoon, Sung-Min
    You, In-Kyu
    Lee, Jong-Keun
    Kim, Young-Soon
    Noh, Yong-Young
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 108 (10)
  • [10] A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors
    Kim, Chang Hyun
    Castro-Carranza, Alejandra
    Estrada, Magali
    Cerdeira, Antonio
    Bonnassieux, Yvan
    Horowitz, Gilles
    Iniguez, Benjamin
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (03) : 1136 - 1141