MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs

被引：0
|
作者：
Goto N. [1 ]
Sone N. [1 ,3 ]
Iida K. [1 ,4 ]
Lu W. [1 ]
Suzuki A. [1 ]
Murakami H. [1 ]
Terazawa M. [1 ]
Ohya M. [1 ,4 ]
Kamiyama S., Prof. [1 ]
Takeuchi T. [1 ]
Iwaya M. [1 ]
Akasaki I. [1 ,2 ]
机构：
[1] Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya
[2] Akasaki Research Center, Nagoya University, Furo, Chikusa, Nagoya
[3] Koito Manufacturing CO., Ltd., 50 Kitawaki, Shimizu-ku, Shizuoka-shi
[4] Toyada Gosei Co., Ltd., 1-1, Higashitakasuka, Futatsudera, Ama-shi
来源：
Journal of Crystal Growth | 2020年 / 539卷
基金：
日本学术振兴会;
关键词：
A1; Nanostructures; A3. Metalorganic vapor phase epitaxy; B1; Nitrides; B3. Laser diodes;
D O I：
10.1016/j.jcrysgro.2020.125571
中图分类号：
学科分类号：
摘要：
Embedded growth of an n-GaN cap layer on multi-quantum shells (MQSs) and nanowires through a tunnel junction (TJ) was investigated for the improvement of current injection to the m-plane of the MQSs. Different growth conditions for an n-GaN cap layer were systematically studied to suppress Mg diffusion and void formation, which are serious problems in this structure. At a high temperature of 900 °C and above, the growth rate on a semi-polar r-plane decreased, and large voids were formed at the bottom part of the nanowires owing to the diffusion of Ga atoms from the r-plane to the m-plane. When the growth temperature decreased to 800 °C, the growth rate on both the m-plane and the r-plane increased, and the size of voids decreased. Simultaneously, Mg diffusion also disappeared because of the low growth temperature of 800 °C. It was found that the growth with an extremely low V/III ratio of 20 at low temperatures increases the lateral growth rate on the m-plane, and void formation is fully suppressed when the MQS height is 700 nm or less. © 2020 Elsevier B.V.
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