共 65 条
Nonlinear Valley Hall Effect
被引:25
作者:

Das, Kamal
论文数: 0 引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Phys, Kanpur 208016, India
Weizmann Inst Sci, Dept Condensed Matter Phys, IL-7610001 Rehovot, Israel Indian Inst Technol, Dept Phys, Kanpur 208016, India

Ghorai, Koushik
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机构:
Indian Inst Technol, Dept Phys, Kanpur 208016, India Indian Inst Technol, Dept Phys, Kanpur 208016, India

Culcer, Dimitrie
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h-index: 0
机构:
Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
Univ New South Wales, ARC Ctr Excellence Future Low Energy Elect Technol, Sydney, NSW 2052, Australia Indian Inst Technol, Dept Phys, Kanpur 208016, India

Agarwal, Amit
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h-index: 0
机构:
Indian Inst Technol, Dept Phys, Kanpur 208016, India Indian Inst Technol, Dept Phys, Kanpur 208016, India
机构:
[1] Indian Inst Technol, Dept Phys, Kanpur 208016, India
[2] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-7610001 Rehovot, Israel
[3] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
[4] Univ New South Wales, ARC Ctr Excellence Future Low Energy Elect Technol, Sydney, NSW 2052, Australia
关键词:
POLARIZATION;
MOS2;
D O I:
10.1103/PhysRevLett.132.096302
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
The valley Hall effect arises from valley-contrasting Berry curvature and requires inversion symmetry breaking. Here, we propose a nonlinear mechanism to generate a valley Hall current in systems with both inversion and time-reversal symmetry, where the linear and second-order charge Hall currents vanish along with the linear valley Hall current. We show that a second-order valley Hall signal emerges from the electric field correction to the Berry curvature, provided a valley-contrasting anisotropic dispersion is engineered. We demonstrate the nonlinear valley Hall effect in tilted massless Dirac fermions in strained graphene and organic semiconductors. Our Letter opens up the possibility of controlling the valley degree of freedom in inversion symmetric systems via nonlinear valleytronics.
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页数:7
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共 65 条
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