p-WSe2 Nanosheets/n-WS2 Quantum Dots/p-Si (2D-0D-3D) Mixed-Dimensional Multilayer Heterostructures Based High-Performance Broadband Photodetector

In this work, we have investigated the performance of a p-WSe2 Nanosheets (NSs)/n-WS2 Quantum dots (QDs)/p-Si (2D-0D-3D) based mixed-dimensional (MD) multilayer heterostructure photodetector with Ag as top contact electrode. The WSe2 NSs and WS2 QDs are synthesized by solvothermal and hydrothermal synthesis methods, respectively. The proposed photodetector exhibits a broad photo response over 300 nm (ultraviolet) to 1100 nm (infrared) with the maximum responsivity (R) of 2.14x10(2) A/W, detectivity (D*) of 2.35x10(13) Jones, and external quantum efficiency (EQE) of 82710% at 322 nm and -3 V reverse bias voltage. The measured rise time and fall time of the device are 24 ms and 21 ms, respectively. Our proposed p-WSe2 NS/n-WS2 QDs/p-Si (2D-0D-3D) photodetector is shown to have nearly similar to 8 times higher values of R and EQE, 17 times higher value of D*, 34 times lower value of the rise time and 38 times lower value of the fall time as compared to the respective performance parameters of the n-WS2 QDs/p-Si (0D-3D) MD heterojunction photodetector.