Low Temperature 808 nm High Efficiency Semiconductor Laser

被引：0
作者：
Wu S.-H. [1 ,2 ]
Liu G.-J. [2 ,3 ]
Wang Z.-F. [4 ]
Li T. [4 ]
机构：
[1] School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun
[2] State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun
[3] College of Physics and Electronic Engineering, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Hainan Normal University, Haikou
[4] State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2022年 / 43卷 / 05期
基金：
中国国家自然科学基金;
关键词：
Carrier leakage; High efficiency; Low temperature; Semiconductor laser; Temperature effects;
D O I：
10.37188/CJL.20220025
中图分类号：
学科分类号：
摘要：
In order to improve the performance of 808 nm semiconductor laser operating at low temperature, the temperature dependence of electro-optical conversion efficiency was studied. Combining the suppression of carrier leakage and the optimization of the series resistance, the carrier confinement phenomenon in the quantum well was analyzed theoretically. Moreover, the potential barrier height and the corresponding quantum well structure for low temperature operating were proposed, including the optimization of important parameters such as the material composition and thickness of the barrier layer, which showed significant benefit for operation under low temperature. Basing on the optimized epitaxial structure, semiconductor laser bars with a cavity length of 2 mm were fabricated. Under the temperature of -50 ℃, an electro-optical conversion efficiency of 71% was demonstrated with a slope efficiency of 1.34 W/A and an injection current of 600 A. Record high electro-optical conversion efficiency of 73.5% was reached with the injection current of 400 A, while the carrier confinement efficiency was as high as 99%, and the series resistance was as low as 0.43 mΩ. In the temperature range of -60-60 ℃, the shift coefficient of the center wavelength with temperature was about 0.248 nm/℃. © 2022, Science Press. All right reserved.
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页码：786 / 795
页数：9
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