Study of single-electron tunneling oscillations using monte-carlo based modeling algorithms to a capacitive slanted two-dimensional array of tunnel junctions

This work simulates and examines the circuit's operation for a single-electron nanostructure which is composed of slanted coupled two-dimensional arrays of tunnel junctions. The structure under study is modeled by combined computational simulation methods, both the Master Equation and the Monte-Carlo techniques. Throughout this process, the distribution of the time between successive random events could be computed at a reference junction. From these time distribution values, further calculations have been carried out to obtain the power spectral density trends, which reflect the corresponding properties on the frequency domain. For these homogeneous structures, the biasing conditions have been inspected for a combination of the two array's legs. It is found that, for some shorter lengths 3, 5, and up to 7 tunnel junctions could be triggered from any same or opposite side ends having different voltage polarities. For relatively longer structures of sizes 10, 15, 20, and 30 tunnel junctions, the circuit initial parameters are readjusted for obtaining remarkable results for their oscillations study. By increasing the value of the slanted coupling capacitance, the steady-state currents are in terms increased, and in this way, it is possible to realize the tunnel events correlations. It is shown that tuning the stray capacitances by slightly increasing their values will lead to a good clearer effect, especially for those longer array sets. © 2021 the Author(s), licensee AIMS Press. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0)