Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

In order to better understand the memristive characteristics of Ag/1%(Co, Li)-co-doped ZnO/Pt/Si-SiO2 devices, this work looks at possible uses of dual-doped materials-based memory for neuromorphic computing. Transmission electron microscopy (TEM) was used to study the device structure after a 70-nm thin layer of 1% (Co, Li)-co-doped ZnO was formed on a Si-SiO2 substrate using a sputtering technique. The set and reset voltages of 1.22 V and 1.01 V, respectively, were demonstrated by the devices, which demonstrated dependable repeatable resistance switching for 80 cycles. Analyzing conductance modulation with recurrent both positive and negative pulses revealed depression and potentiation curves that were almost linear. In order to clarify the switching process, a physical model was put out that focused on the oxidation-reduction reactions that drive the production and rupture of Ag conductive filaments in the presence of an applied electric field. The device's usefulness for neuromorphic computing systems is highlighted by its reversible transitions between high and low resistance states and its steady and symmetric I-V properties. These results imply that (Co, Li)-co-doped ZnO memristors are good options for creating dependable and effective memory technologies.