A D-Band Power Amplifier With 60-GHz Large-Signal Bandwidth and 7.6% Peak PAE in 28-nm CMOS

被引：5

作者：

Yan, Zheng ^{[1
]}

Chen, Jixin ^{[2
,3
]}

Chen, Zhe ^{[1
]}

Tang, Dawei ^{[1
]}

Li, Zekun ^{[1
]}

Zhang, Rui ^{[1
]}

Zhou, Peigen ^{[1
]}

Hong, Wei ^{[2
,3
]}

机构：

[1] Southeast Univ, State Key Lab Millimeter Waves, Nanjing 210096, Peoples R China

[2] Southeast Univ, State Key Lab Millimeter Waves, Nanjing 210096, Peoples R China

[3] Purple Mt Lab, Nanjing 210096, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2024年 / 34卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Gain; Transistors; Impedance; Wideband; Power amplifiers; CMOS technology; Logic gates; Broadband; CMOS; common source (CS); D-band; efficiency; neutralizing capacitor; power amplifier (PA); transformer; DESIGN;

D O I：

10.1109/LMWT.2024.3380441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a D -band four-stage differential common-source (CS) power amplifier (PA) in 28-nm bulk CMOS. To expand the large-signal bandwidth and improve the efficiency of the PA, transistor size and layout of the CS stage have been optimized. Neutralizing capacitor is utilized to boost the gain and improve the stability of the CS stage. Additionally, transformer-based matching networks are introduced to realize the wideband output match and multistage staggering scheme, thereby expanding the bandwidth of the PA. The proposed PA achieves a 38-GHz (114-152 GHz) large-signal 1-dB bandwidth and a 60-GHz (110-170 GHz) large-signal 3-dB bandwidth. The measured maximum Psat and OP1 (dB )are 9.5 and 4.2 dBm with a peak power added efficiency (PAE) of 7.6% at 124 GHz. The measured peak S-21 is 21.9 dB at 160 GHz. To the best of our knowledge, the proposed PA demonstrates the broadest large-signal bandwidth among $D$ -band PAs fabricated in CMOS technology.

引用

页码：540 / 543

页数：4

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