Impact of vacancies on twisted bilayer graphene quantum point contacts

被引:0
作者
Moles, Pablo [1 ]
Dominguez-Adame, Francisco [1 ]
Chico, Leonor [1 ]
机构
[1] Univ Complutense, Dept Fis Mat, GISC, E-28040 Madrid, Spain
关键词
CONDUCTANCE;
D O I
10.1103/PhysRevB.109.045415
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We carry out an extensive numerical study of low-temperature electronic transport in quantum point contacts based on twisted bilayer graphene. Assuming ballistic electron dynamics, quantized plateaus in the conductance are observed in defect-free samples when the twisting angle is large enough. However, plateaus are smeared out and hardly noticeable on decreasing the angle. Close to the magic angle, the conductance around the charge neutrality point drops significantly and the quantization steps visible at higher angles are no longer appreciable. Furthermore, we consider the effects of a random distribution of vacancies on the quantum point contact. Whereas the electron-hole symmetry is broken in pristine samples, we find that this symmetry is restored upon increasing the concentration of vacancies. We explain this effect by a reduction of the effective interlayer coupling due to the presence of the vacancies.
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页数:7
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