Current-Induced Spin and Orbital Polarization in Magnetic Sliding Ferroelectrics

被引:1
作者
Dong, Haoxiang [1 ]
Zhou, Jian [1 ]
机构
[1] Xi An Jiao Tong Univ, Ctr Alloy Innovat & Design, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2024年 / 18卷 / 08期
基金
中国国家自然科学基金;
关键词
current-induced magnetism; first-principles calculations; magnetoelectric coupling; orbital angular momentum; spin angular momentum;
D O I
10.1002/pssr.202400062
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
One of the main challenges for modern information read and write technology is how to effectively and precisely modulate the interconversion between electricity and magnetism with a high data density. Herein, it is proposed that two-dimensional magnetic sliding ferroelectrics can serve as a prototypical material platform with tunable electric current-induced magnetization variation, a typical nonequilibrium magnetoelectric coupling process. Using a CrI3 bilayer as the exemplary material, first-principles calculations are performed to enumerate the monopole values, toroidal vectors, and quadrupole moment tensors. Their switching is also elucidated under a short distance sliding between the two layers, which can effectively flip the electric dipole moment. In addition to spin polarization which is usually studied for magnetic systems, the orbital moment contribution to the magnetoelectric coupling is also evaluated. They are found to be comparable in their magnitude and neither should be omitted, as opposed to equilibrium states. The work helps to reveal the underlining mechanisms among electronics, spintronics, and orbitronics in low-dimensional multiferroic materials. Herein, first-principle calculation and linear response theory are performed to investigate the current-induced spin polarization and current-induced orbital polarization of specific MSF bilayer CrI3. This work reveals the relationship between current-induced magnetization in sliding ferroic materials, providing the possibility of exploring advanced information storage and memory devices.image (c) 2024 WILEY-VCH GmbH
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页数:8
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