Morphology of Al Thin Films Deposited Under Different Magnetic Field Configurations by Grid-assisted Magnetron Sputtering

被引：0
|
作者：
Duarte, D. A. [1 ,2 ,3 ]
Sagas, J. C. [2 ,3 ]
Grigorov, K. [3 ,4 ]
机构：
[1] Univ Fed Santa Catarina, Joinville Ctr Technol, Lab Surface Treatments, 8300 Dona Francisca St,Zona Ind Norte, BR-89219600 Joinville, SC, Brazil
[2] Univ Estado Santa Catarina, Lab Plasmas Films & Surfaces, 200 Paulo Malschitzki St,Zona Ind Norte, BR-89219710 Joinville, SC, Brazil
[3] Inst Tecnol Aeronaut, Plasmas & Proc Lab, 50 Marechal Eduardo Gomes Sq,Vila Acacias, BR-12228900 Sao Jose Dos Campos, SP, Brazil
[4] Bulgarian Acad Sci, Space Res & Technol Inst, Acad G, Bonchev Str 1, Sofia 1113, Bulgaria
来源：
BRAZILIAN JOURNAL OF PHYSICS | 2024年 / 54卷 / 05期
基金：
巴西圣保罗研究基金会;
关键词：
Morphology; Aluminum; Thin films; Magnetic field; Magnetron sputtering;
D O I：
10.1007/s13538-024-01539-2
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Aluminum thin films were deposited by unbalanced grid-assisted magnetron sputtering. Depositions were made with different net charges of the particles bombarding the substrate through modifications in the magnetic field with the aid of permanent and electro magnets. Film morphology was evaluated by atomic force microscopy and the results point out that the surface roughness of the film deposited with net positive ions bombardment is about five times higher than the surface roughness obtained with net electrons bombardment and ten times higher than that obtained with neutral net charge bombardment.
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页数：4
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