High-power DC Transformer Based on IGCT-plus and Medium-frequency Isolation

被引：0

作者：

Zhao B. ^{[1
]}

Cui B. ^{[1
]}

Ma Y. ^{[1
]}

An F. ^{[1
]}

Qu L. ^{[1
]}

Yu Z. ^{[1
]}

Song Q. ^{[1
]}

Zeng R. ^{[1
]}

机构：

[1] State Key Laboratory of Control and Simulation of Power System and Generation Equipment, Department of Electrical Engineering, Tsinghua University, Haidian District, Beijing

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2023年 / 43卷 / 03期

关键词：

DC grid; dc transformer; integrated gate commutated thyristor (IGCT); power electronics;

D O I：

10.13334/j.0258-8013.pcsee.220741

中图分类号：

学科分类号：

摘要：

High-power DC transformers (HDCT) with at least tens of thousands of volts isolation and megawatt capacity are the core equipment of DC grid. This paper proposes a HDCT solution based on IGCT-Plus devices and medium-frequency isolation. The topology and soft-switching characterization of IGCT-HDCT are proposed. On this basis, the power loss performance of power semiconductor devices and transformer is analyzed, the proposed IGCT-HDCT has the smallest power loss compared with traditional SiC and IGBT solution for HDCT based on medium-frequency isolation. In addition, the design method of megawatt sub-module is given and the engineering prototype is developed. At last, an experimental platform of IGCT-HDCT is built, high current turnoff and high power operation experimental research are conducted, and the results verify the correctness and effectiveness of IGCT-HDCT. © 2023 Chinese Society for Electrical Engineering. All rights reserved.

引用

页码：1114 / 1122

页数：8

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