Thickness-Dependent Nanoscale Elastic Stiffening of Chemical Vapor Deposited Atomically Thin 2H-MoS2 Films

被引:6
作者
Meganathan, Kalaiarasan [1 ]
Mangamma, G. [2 ]
Swaminadhan, M. J. [3 ]
Murugan, Vijaykumar [1 ]
Shinde, Nitin Babu [1 ]
Ghosh, Saurabh [3 ]
Eswaran, Senthil Kumar [1 ,4 ]
机构
[1] SRM Inst Sci & Technol SRMIST, Dept Phys & Nanotechnol, 2D Mat & Devices Lab 2DML, Sir CV Raman Res Pk, Chennai 603203, India
[2] Indira Gandhi Ctr Atom Res IGCAR, Surface & Nanosci Div, Kalpakkam 603102, Tamil Nadu, India
[3] SRM Inst Sci & Technol SRMIST, Dept Phys & Nanotechnol, Mat Devices Lab, Chennai 603203, India
[4] SRM Inst Sci & Technol SRMIST, Nanotechnol Res Ctr NRC, Chennai 603203, India
关键词
MOS2; STIFFNESS;
D O I
10.1021/acs.jpclett.3c03512
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Understanding the nanoscale elastic-size-effects of atomically thin transition-metal dichalcogenides (TMDs) as a function of thickness underpins the avenue of flexible 2D electronics. In this work, we employed the atomic force acoustic microscopy (AFAM) technique to investigate the thickness-dependent elastic properties of CVD grown 2H-MoS2 films. The monolayer MoS2 exhibited a Young's modulus of 273 +/- 27 GPa. Our systematic analysis from bulk to monolayer suggests that the 2H-MoS2 phase exhibits nanoscale elastic-stiffening behavior with decreasing number of layers (thickness). The Young's modulus increased by a factor of similar to 2.7 for monolayer MoS2 when compared with the bulk. First-principle DFT calculations affirm the nanoscale elastic-stiffening behavior of MoS2 with decreasing number of layers. Our findings suggest that the observed elastic stiffening is due to the interlayer sliding, which may be facilitated by defects in MoS2 layers. The observed elastic stiffening may be of potential importance for understanding TMD based nanomechanical devices.
引用
收藏
页码:4206 / 4211
页数:6
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