The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors

被引：0

作者：

Protasov, D. Yu. ^{[1
,2
]}

Kamesh, P. P. ^{[2
]}

Svit, K. A. ^{[1
]}

Dmitriev, D. V. ^{[1
]}

Makeeva, A. A. ^{[1
]}

Rzaev, E. M. ^{[3
]}

Zhuravlev, K. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Novosibirsk State Tech Univ, Novosibirsk 630073, Russia

[3] JSC Zelenograd Nanotechnol Ctr, Zelenograd 124527, Moscow, Russia

来源：

SEMICONDUCTORS | 2024年 / 58卷 / 03期

关键词：

elecrochemical profiling; n(+)/n GaAs; etching defects; concentration profile distortions; ELECTROLYTE;

D O I：

10.1134/S1063782624030126

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that when using a standard electrochemical profiling recipe that applies intensive illumination by halogen lamp with power up to 250 W of n(+)/n GaAs structure to generate the holes necessary for etching, the resulting electron distribution profile differs from that set during growth for an electron concentration in the n(+)-layer > 4 x 10(18) cm(-3) when using EDTA electrolyte. This difference is due to the appearance and development of etching pits caused by the increase in the degree of defectivity of GaAs layers with increasing concentration of the donor impurity-silicon. To obtain adequate electron distribution profiles in n(+)/n GaAs structures it is necessary to limit the illumination up to 25 W.

引用

页码：254 / 262

页数：9

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