Preparation of High-performance Multicrystalline Silicon Ingot Based on Innovative Seeding Strategy for Recycled Seeds

被引:0
作者
Hu, Runguang [1 ]
Lei, Qi [1 ]
He, Liang [2 ,3 ]
Li, Jianmin [2 ,3 ]
Xu, Yunfei [2 ,3 ]
Hu, Dongli [1 ]
Zhang, Jinbing [1 ]
机构
[1] NingboTech Univ, Zhejiang Engn Res Ctr Fabricat & Applicat Adv Phot, Sch Mat Sci & Engn, Ningbo 315100, Peoples R China
[2] Xinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
[3] LDK Solar Co Ltd, Natl Photovolta Engn Res Ctr, Xinyu 338032, Peoples R China
关键词
Multicrystalline silicon; Seed; Dislocation; Solar cells; MULTI-CRYSTALLINE SILICON; DIRECTIONAL SOLIDIFICATION; DISLOCATION CLUSTERS; GRAIN-STRUCTURE; QUALITY; GROWTH; DEFECTS;
D O I
10.1007/s12633-024-03064-y
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In the preparation of high-performance multicrystalline silicon (HPM-Si) wafers, it is usually necessary to use costly polycrystalline silicon (Poly-Si) as the seed layer. In order to reduce cost and simplify process control, this paper presents an innovative strategy for the preparation of HPM-Si wafers using recycled multicrystalline silicon (mc-Si) seeds, aiming to reduce cost and simplify the production process. HPM-Si ingots were successfully prepared by using the substandard region at the ingot bottom as the seed layer combined with an intentional seed arrangement and seeding process. The results show that the Si ingots prepared from recycled seeds do not differ significantly from the conventional method in terms of yield, crystal quality and solar cell performance, while remarkably reducing the preparation cost. In particular, the height, grain morphology and defect distribution of the red zone at the bottom of the silicon brick grown by laying the bottom region of the ingot upside down as seeds are comparable to those of common HPM-Si. In addition, the efficiency of the fabricated solar cells is also comparable to that of common HPM-Si wafers, which provides a new idea for the industrialized production of low-cost HPM-Si wafers.
引用
收藏
页码:5009 / 5017
页数:9
相关论文
共 20 条
  • [1] Optimization of power consumption on silicon directional solidification system by using numerical simulations
    Chen, Liguo
    Dai, Bing
    [J]. JOURNAL OF CRYSTAL GROWTH, 2012, 354 (01) : 86 - 92
  • [2] Ciftja, 2014, GROWTH HIGH PERFORMA
  • [3] Effect of the fused quartz particle density on nucleation and grain control of high-performance multicrystalline silicon ingots
    Ding, Junjing
    Yu, Yunyang
    Chen, Wenliang
    Zhou, Xucheng
    Wu, Zhiyong
    Zhong, Genxiang
    Huang, Xinming
    [J]. JOURNAL OF CRYSTAL GROWTH, 2016, 454 : 186 - 191
  • [4] Natural sedimentation of insoluble particles during directional solidification of upgraded metallurgical-grade silicon
    Gan, C. H.
    Xiong, H. P.
    Fang, M.
    Qiu, S.
    Xing, P. F.
    Luo, X. T.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2016, 439 : 74 - 79
  • [5] Numerical and experimental investigation of octagonal thermal field for improving multi-crystalline silicon ingot quality
    He, Liang
    Lei, Qi
    Rao, Senlin
    Mao, Wei
    Luo, Hongzhi
    Xu, Yunfei
    Zhou, Cheng
    Li, Jianmin
    Ding, Junling
    Cheng, Xiaojuan
    [J]. VACUUM, 2021, 185
  • [6] Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots
    Kupka, I.
    Lehmann, T.
    Trempa, M.
    Kranert, C.
    Reimann, C.
    Friedrich, J.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2017, 465 : 18 - 26
  • [7] Spatial distribution of structural defects in Cz-seeded directionally solidified silicon ingots: An etch pit study
    Lantreibecq, A.
    Legros, M.
    Plassat, N.
    Monchoux, J. P.
    Pihan, E.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2018, 483 : 183 - 189
  • [8] Clarification of the relation between the grain structure of industrial grown mc-Si and the area fraction of electrical active defects by means of statistical grain structure evaluation
    Lehmann, Toni
    Reimann, Christian
    Meissner, Elke
    Friedrich, Jochen
    [J]. ACTA MATERIALIA, 2016, 106 : 98 - 105
  • [9] Impact of silicon melt infiltration on the quality of cast crystalline silicon
    Lei, Qi
    He, Liang
    Tang, Changxin
    Liu, Shilong
    Zhou, Lang
    [J]. SOLAR ENERGY, 2021, 225 : 569 - 576
  • [10] Growth of high-quality multi-crystalline silicon ingot by using Si particles embedded in the Si3N4 layer
    Lei, Qi
    He, Liang
    Ming, Liang
    Tang, Changxin
    Rao, Senlin
    Zhou, Lang
    [J]. JOURNAL OF CRYSTAL GROWTH, 2020, 546