Preparation of high-purity dispersed single-crystal diamond particles

被引:0
作者
Tan, X. [1 ,2 ]
He, Z. [1 ]
Yang, Q. [1 ]
Wang, J. [1 ]
Cang, L. [1 ]
Du, Y. [1 ]
Qi, H. [1 ]
机构
[1] Inner Mongolia Univ Sci & Technol, Sch Mech Engn, Baotou 014010, Peoples R China
[2] Inner Mongolia Key Lab Intelligent Diag & Control, Baotou 014010, Peoples R China
基金
中国国家自然科学基金;
关键词
Single crystal diamond; Diamond particles; Methane concentration; Seeding density; BORON-DOPED DIAMOND; PHYSICAL-PROPERTIES; NITROGEN; FILMS; DEFECTS; RAMAN;
D O I
10.1007/s12648-024-03213-4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The demand for quantum functional devices with diamond as the primary structure is rapidly increasing, leading to higher quality requirements for the preparation of micron-scale diamonds. We utilized a low-density seeding method to control diamond growth in the chemical vapor deposition equipment, resulting in the fabrication of micrometer-scale and dispersed single-crystal diamond particles. By discussing the effects of different methane concentrations, growth temperatures, and working pressures on the morphology, crystal faces, crystal properties, and bonding states of diamond, we explored the influence of various process parameters on the diamond growth process. This study provides a solution for preparing high-quality dispersed diamond at the micrometer scale, paving the way for high-quality substrates for quantum devices based on diamond.
引用
收藏
页码:4457 / 4462
页数:6
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