Investigation of radiation effects on structural, morphological, and compositional properties of WO3 nanostructures for water splitting applications

被引：0

作者：

Pande, Sukhada S. ^{[1
]}

Kakade, Prashant M. ^{[1
]}

Kachere, Avinash R. ^{[1
]}

Shinde, Pratibha S. ^{[2
]}

Kolhe, Pankaj S. ^{[1
]}

Sonawane, Kishor M. ^{[1
]}

Ruz, Priyanka ^{[3
]}

Sudarshan, V. ^{[3
]}

Dhole, Sanjay D. ^{[2
]}

Jadkar, Sandesh R. ^{[2
]}

Sharma, Rajendrakumar ^{[4
,5
]}

Mandlik, Nandkumar T. ^{[1
]}

机构：

[1] Savitribai Phule Pune Univ, Fergusson Coll Autonomous, Dept Phys, Pune 411004, Maharashtra, India

[2] Savitribai Phule Pune Univ, Dept Phys, Pune 411007, Maharashtra, India

[3] Bhabha Atom Res Ctr, Chem Div, Mumbai 400085, Maharashtra, India

[4] KIIT Univ, Nanosci Phys Dept, Bhubaneswar, Odisha, India

[5] SPEL Technol Pvt Ltd, Pune 411013, Maharashtra, India

来源：

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY | 2024年 / 333卷 / 08期

关键词：

Tungsten oxide (WO3); Structural defects; Gamma radiation; Photoelectrochemical water splitting; THIN-FILMS; TUNGSTEN-OXIDE; OPTICAL-PROPERTIES; GAMMA; PHOTOANODES; NANOPARTICLES; NANOCRYSTALS; RADIOLYSIS; OXIDATION; ARRAYS;

D O I：

10.1007/s10967-024-09520-8

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Gamma radiation can cause structural defects in metal oxide thin films, affecting their conversion efficiency. This study focuses on synthesizing and characterizing Tungsten oxide (WO3) films for photo-electrochemical (PEC) water-splitting applications. The pristine WO3 film was irradiated with a Co-60 gamma source to improve its photocatalytic activity and was named G-WO3. The resulting G-WO3 thin films showed a decrease in the optical direct band gap and showed higher photocurrent density and lower charge transfer resistance for PEC applications. The carrier charge density (N-d) values were found to be increased after gamma-radiation. The synthesized G-WO3 thin films possess good stability and reusability for photo-electrochemical water-splitting applications.

引用

页码：4421 / 4432

页数：12

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