Efficient terahertz generation from van der Waals α-In2Se3

被引:1
作者
Duan, Shijie [1 ,2 ]
Yang, Ming [1 ,2 ]
Zhou, Suyuan [1 ,3 ]
Zhang, Longhui [1 ,4 ]
Han, Jinsen [1 ,2 ]
Sun, Xu [1 ,2 ]
Wang, Guang [1 ,2 ]
Liu, Changqin [1 ,2 ]
Kang, Dongdong [1 ,2 ]
Wang, Xiaowei [1 ,2 ]
Chen, Jiahao [1 ,2 ]
Dai, Jiayu [1 ,2 ]
机构
[1] Natl Univ Def Technol, Coll Sci, Dept Phys, Changsha 410073, Peoples R China
[2] Hunan Key Lab Extreme Matter & Applicat XMAL, Changsha 410073, Peoples R China
[3] Xiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Peoples R China
[4] Guilin Univ Elect Technol, Guangxi Key Lab Automat Detecting Technol & Instru, Guilin 541004, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
van der Waals; terahertz; carrier dynamics; SURFACE OPTICAL RECTIFICATION; LAYERED MOS2 CRYSTAL; GRAPHENE; IN2SE3; FERROELECTRICITY; MICROSCOPY; EMISSION;
D O I
10.3788/COL202422.013202
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Two-dimensional (2D) van der Waals materials have attracted tremendous attention due to their versatile physical properties and flexible manipulation approaches. Among the various types of van der Waals materials, alpha-In2Se3 is remarkable for its intrinsic 2D ferroelectricity and high-performance opto-electronic properties. However, the study of the alpha-In2Se3 system in terahertz (THz) radiation is scarce, although it is promising for electrically controlled THz field manipulation. We investigate the alpha-In2Se3 in different thicknesses and report that the THz generation efficiency induced by femtosecond laser pulses can be largely improved by reducing the thickness from the bulk. Furthermore, we reveal the surge current in thin film coupled with THz emission exhibits a different Auger recombination mode, which is helpful in understanding the mechanism and provides insights into the design of 2D highly efficient THz devices.
引用
收藏
页数:6
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