The ferroelectric and piezoelectric properties of (Hf1-xCex)O2 films on indium tin oxide/Pt/TiOx/SiO2/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

被引：1

作者：

Chaya, Nachi ^{[1
]}

Okamoto, Kazuki ^{[1
]}

Hirai, Koji ^{[1
]}

Yasuoka, Shinnosuke ^{[1
]}

Inoue, Yukari ^{[2
]}

Yamaoka, Wakiko ^{[2
]}

Funakubo, Hiroshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Mat Sci & Engn, Yokohama, Kanagawa 2268502, Japan

[2] TDK Corp, Tech Ctr, Ichikawa, Chiba 2728558, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 04期

基金：

日本学术振兴会;

关键词：

no-heating processes; ferroelectric HfO2-based films; thick films; RF magnetron sputtering method; THIN-FILMS; CRYSTAL-STRUCTURE;

D O I：

10.35848/1347-4065/ad3a71

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of composition and film thickness on the ferroelectric and piezoelectric properties of (Hf1-xCex)O-2 films deposited without substrate heating was investigated. (Hf1-xCex)O-2 films with various x values (x = 0.07-0.27) and thickness (150-880 nm) were deposited via RF magnetron sputtering on indium tin oxide (ITO)/Pt/TiOx/SiO2/(100)Si substrates. The crystalline phases of the films were observed by X-ray diffraction. The measurements of electrical properties revealed ferroelectric phases in the x range of 0.11-0.21. The film with x = 0.16 exhibited the maximum remanent polarization (Pr) of 15 mu C cm(-2), as well as the highest effective piezoelectric coefficient. In addition, the ferroelectric and structural properties remained almost unchanged with increasing film thickness. Therefore, the no-heating deposition of ferroelectric (Hf1-xCex)O-2 films and their phase stability with respect to thickness were demonstrated in this study. This work provides a pathway for the deposition of ferroelectric (Hf1-xCex)O-2 films on flexible, wearable sensors. (c) 2024 The Japan Society of Applied Physics

引用

页数：7

共 36 条

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